Ssd 960 evo m

     
Up khổng lồ 3,200 MB/s (Seq. Read) | Up lớn 1,500 MB/s (Seq. Write) | PCIe 3.0 (x4) | NVMe (1.2) | M.2 (2280) | AES 256-bit

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BrandSeriesModelHighlightsApplicationCapacityForm FactorInterfaceDimensionWeightStorage MemoryControllerCache MemorySoftwareInstallation KitWarrantyTRIM SupportS.M.A.R.T SupportGC (Garbage Collection)Encryption SupportWWN SupportDevice Sleep Mode SupportSequential ReadSequential WriteRandom Read (4KB, QD32)Random Write (4KB, QD32)Random Read (4KB, QD1)Random Write (4KB, QD1)Average power nguồn Consumption (system level)Power consumption (Idle)TRIM SupportOperating TemperatureShock
General
Samsung
950 Pro
MZ-V5P512BW
Samsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) khung Factor, 512GB Capacity, Up lớn 2,500 MB/s (Seq. Read), Up lớn 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low nguồn DDR3 SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).
Specifications
Client PCs
512 GB (1 GB=1 Billionbyte by IDEMA)
M.2 2280
PCIe 3.0 x4 (up khổng lồ 32 GB/s) NVMe 1.1
Max. 80.15 x 22.15 x 2.38 (mm) (W x H x D)
Max. 10g
Samsung V-NAND
Samsung UBX Controller
Samsung 512 MB Low power nguồn DDR3 SDRAM
Magician Software for SSD management
Not Available
5 Year Limited Warranty or 400 TBW Limited Warranty
Special Feature
TRIM Supported
S.M.A.R.T Supported
Auto Garbage Collection Algorithm
AES 256-bit for User Data EncryptionTCG Opal Family Spec and eDrive(IEEE1667) khổng lồ be supported by FW update
N/A
Yes
Performance
Up to 2,500 MB/sec
Up lớn 1,500 MB/sec
Up to lớn 300,000 IOPS
Up to 110,000 IOPS
Up to 12,000 IOPS
Up to 43,000 IOPS
Environment
Average: 5.7 WattsMaximum: 7.0 Watts (Burst mode)
Max. 1.7 Watts
1.5 Million Hours Reliability (MTBF)
0 °C khổng lồ 70 °C (Measured by SMART Temperature. Proper airflow recommended)
1500G , duration 0.5m sec, 3 axis

What is V-NAND technology?Shedding light on a whole new standard of capacity and performance.

Samsung V-NAND giải pháp công nghệ overcomes the capacity limitations of traditional 2 chiều NAND technology with its revolutionary vertical design. V-NAND also applies innovative Charge Trap Flash (CTF) giải pháp công nghệ which prevents data corruption caused by cell-to-cell interference. The synergy of both structural và material innovations leads to improved speed, power efficiency, and endurance.

 

Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND lớn a vertical structure. Samsung V-NAND technology features a quality design that stacks 48 layers on top of one another instead of trying to lớn decrease the cells’ pitch size. Samsung used Channel Hole công nghệ (CHT) to lớn enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.

 

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Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF giải pháp công nghệ which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges lớn maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.

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Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND giải pháp công nghệ lets heavy-workload users and data centers store and handle more data with greatly improved capacity.

Samsung V-NAND enables up to lớn 100 layers of cells to lớn be stacked with the potential to scale the mật độ trùng lặp từ khóa up khổng lồ 1 Terabit. The 2d planar NAND density ceiling can only reach the minimum mật độ trùng lặp từ khóa of V-NAND.

 

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Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to lớn cell-to-cell interference.

V-NAND does not need to lớn go through a complex program algorithm to write data, và this enables the memory to lớn write data up to two times faster than traditional 2d planar NAND flash memory.

 

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Unprecedented power nguồn efficiency

Since V-NAND giải pháp công nghệ has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power nguồn consumption is substantially lowered by up lớn 45 percent compared lớn planar NAND memory.

 

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Embedded high endurance lớn store your valuable data

Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, & employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit và 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.


Chuyên mục: Tin Tức