Ssd 960 evo m
This sản phẩm has been recently added lớn our store, the mô tả tìm kiếm has not been entered yet but will be done soon. You may still purchase this sản phẩm by clicking on the "Add lớn Cart" button to địa chỉ it to your shopping cart. For the moment you can refer to lớn the manufacturer"s trang web for the description & features list.
Bạn đang xem: Ssd 960 evo m
| General |
| Samsung |
| 950 Pro |
| MZ-V5P512BW |
| Samsung 950 Pro Series MZ-V5P512BW Internal Solid State Drive (SSD), M.2 (2280) khung Factor, 512GB Capacity, Up lớn 2,500 MB/s (Seq. Read), Up lớn 1,500 MB/s (Seq. Write), PCIe 3.0 x4 (up to 32 GB/s), NVMe 1.1 Interface, Samsung UBX Controller, Samsung V-NAND Storage Memory, Samsung 512 MB Low nguồn DDR3 SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF). |
| Specifications |
| Client PCs |
| 512 GB (1 GB=1 Billionbyte by IDEMA) |
| M.2 2280 |
| PCIe 3.0 x4 (up khổng lồ 32 GB/s) NVMe 1.1 |
| Max. 80.15 x 22.15 x 2.38 (mm) (W x H x D) |
| Max. 10g |
| Samsung V-NAND |
| Samsung UBX Controller |
| Samsung 512 MB Low power nguồn DDR3 SDRAM |
| Magician Software for SSD management |
| Not Available |
| 5 Year Limited Warranty or 400 TBW Limited Warranty |
| Special Feature |
| TRIM Supported |
| S.M.A.R.T Supported |
| Auto Garbage Collection Algorithm |
| AES 256-bit for User Data EncryptionTCG Opal Family Spec and eDrive(IEEE1667) khổng lồ be supported by FW update |
| N/A |
| Yes |
| Performance |
| Up to 2,500 MB/sec |
| Up lớn 1,500 MB/sec |
| Up to lớn 300,000 IOPS |
| Up to 110,000 IOPS |
| Up to 12,000 IOPS |
| Up to 43,000 IOPS |
| Environment |
| Average: 5.7 WattsMaximum: 7.0 Watts (Burst mode) |
| Max. 1.7 Watts |
| 1.5 Million Hours Reliability (MTBF) |
| 0 °C khổng lồ 70 °C (Measured by SMART Temperature. Proper airflow recommended) |
| 1500G , duration 0.5m sec, 3 axis |
What is V-NAND technology?Shedding light on a whole new standard of capacity and performance.
Samsung V-NAND giải pháp công nghệ overcomes the capacity limitations of traditional 2 chiều NAND technology with its revolutionary vertical design. V-NAND also applies innovative Charge Trap Flash (CTF) giải pháp công nghệ which prevents data corruption caused by cell-to-cell interference. The synergy of both structural và material innovations leads to improved speed, power efficiency, and endurance.
Vertical expansion breaks through horizontal limit
Samsung revolutionized the storage industry by shifting the planar NAND lớn a vertical structure. Samsung V-NAND technology features a quality design that stacks 48 layers on top of one another instead of trying to lớn decrease the cells’ pitch size. Samsung used Channel Hole công nghệ (CHT) to lớn enable cells to connect vertically with one another through a cylindrical channel that runs through stacked cells.
Material innovation that no one can match
Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF giải pháp công nghệ which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges lớn maintain cell integrity.
This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.
Xem thêm: S11 Support Galio Build With Highest Winrate, Lol Wild Rift Galio Build Guide
Vertical architecture paves the way for amplified capacity
Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND giải pháp công nghệ lets heavy-workload users and data centers store and handle more data with greatly improved capacity.
Samsung V-NAND enables up to lớn 100 layers of cells to lớn be stacked with the potential to scale the mật độ trùng lặp từ khóa up khổng lồ 1 Terabit. The 2d planar NAND density ceiling can only reach the minimum mật độ trùng lặp từ khóa of V-NAND.
Innovative algorithms equal faster performance
Traditional planar NAND memory requires the creation of sets of complex program algorithms to prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to lớn cell-to-cell interference.
V-NAND does not need to lớn go through a complex program algorithm to write data, và this enables the memory to lớn write data up to two times faster than traditional 2d planar NAND flash memory.
Unprecedented power nguồn efficiency
Since V-NAND giải pháp công nghệ has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power nguồn consumption is substantially lowered by up lớn 45 percent compared lớn planar NAND memory.
Embedded high endurance lớn store your valuable data
Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, & employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.
In comparison between 3-bit và 2-bit, Samsung 3-bit V-NAND shows endurance similar to that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.
Chuyên mục: Tin Tức
